Analysis of radiation effects on some properties of GaAs:Cr and Si sensors exposed to a 22 MeV electron beam
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Abstract
Nowadays, the experiments related to High Energy Physics and others fields demand the use of detectors with greater radiation resistance, and the novel material GaAs:Cr has demonstrated excellent radiation hardness compared with other semiconductors. On the basis of evidence obtained in the JINR experiment with the use of 22 MeV electrons beam generated by the LINAC-800 accelerator, an analysis of electron radiation effects on GaAs:Cr and Si detectors is presented. The measured I-V characteristics showed a dark current increase with dose, and an asymmetry between the two branches of behaviors for all detectors. Analyzing the MIP spectra and CCE dose dependence measurements a deterioration process of detectors collection capacity with dose increase was found, although behaviors are somewhat different according to the detector type. The detailed explanation of these effects from the microscopic point of view appears in the text, and are generally linked to the generation of atomic displacement, vacancies and other radiation defects, modifying the energy levels structure of the target material. These changes affect the lifetime and concentration of the charge carriers, and other characteristics of the target material.
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How to Cite
Torres, A. G., Leyva, A., Zhemchugov, A., Kruchonak, U., Abou El-Azm, S., & Ramos, D. (2019). Analysis of radiation effects on some properties of GaAs:Cr and Si sensors exposed to a 22 MeV electron beam. Nucleus, (64). Retrieved from http://nucleus.cubaenergia.cu/index.php/nucleus/article/view/652
Section
Ciencias Nucleares
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[2] KANG SM, HA JH, PARK S, KIM HS, et al. Radiation response of a semi-insulating GaAs semiconductor detector for charged particle at variable operating temperature. Progress in Nucl. Sc. and Tech. 2011; 1(6): 282-284.
[3] BERTUCCIO G, CASIRAGHI R, MAIOCCHI D, OWENS A, et al. Noise analysis of gallium arsenide pixel X-ray detectors coupled to ultra-low noise electronics. IEEE Trans. Nucl. Sci. 2003; 50(3): 723-728.
[4] TYAZHEV AV, BUDNITSKYDL, KORETSKAY OB, NOVIKOVVA, et al. GaAs radiation imaging detectors with an active layer thickness up to 1 mm. Nuclear Instruments and Methods in Physics Research A. 2003; 509: 34-39.
[5] BRUDNYI VN, POTAPOV AI. Electrical Properties of the Proton-Irradiated Semi-Insulating GaAs: Cr. Electronic and optical properties of semiconductors. Semiconductors. 2001; 35(12): 1361-1365.
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[7] REES GJ. Semi-Insulating III-V Materials. London, 1980. p. 77.
[8] EU V, FENG M, HENDERSON WB, KIM HB, WHELAN JM. Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere. Applied Physics Letters.1980; 37: 473-475.
[9] VEALE MC, BELL SJ, DUARTE DD, FRENCH MJ, et al. Chromium compensated gallium arsenide detectors for X-ray and gamma-ray spectroscopic imaging. Nuclear Instruments and Methods in Physics Research A. 2014; 752: 6-14.
[10] ARDYSHEV MV, PRUDAJEV IA, KHLUDKOV SS. Diffusion of chromium into GaAs as a way to detector material making. IEEE International Siberian Conference on Control and Communications. 2006; SIBCON '05, p.68.
[11] ŠAGÁTOVÁ A, ZAT’KO B, DUBECKÝ F, ANH T, et al. Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons. Applied Surface Science. 2017; 395: 66-71.
[12] YAMAGUCHI M, UEMURA C. Changes in the electrical properties of GaAs due to electron irradiation. Journal of Applied Physics.1984; 57(2): 604-606.
[13] PONS D, BOURGOIN JC. Irradiation induced defects in GaAs. J. Phys. C: Solid State Physics.1985; 18(20): 3839-3871.
[14] MOLL M. Radiation damage in silicon particle detector: microscopic defects and macroscopic properties. PhD Thesis. Universität Hamburg. Hamburg. 1999. https://mmoll.web.cern.ch/mmoll/thesis/pdf/moll-thesis.pdf
[15] RADUA R, FRETWURST E, KLANNER R, et al. Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5 MeV and 15 MeV. Nucl Instrum and Meth in Phys Res A. 2013; 730: 84-90.
[16] CLAEYS C, SIMOEN E. Radiation effects in advanced semiconductor material and devices. Berlin: Springer, 2013.
[17] LANG DV. Radiation effects in semiconductors. Conf. Ser. 1977; (31):70.